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Figure
1, 2, and 4: obtained from Dr. M. A. Bouchiat and Dr. L. Pottier,
Universite Paris VI, Laboratoire De Spectroscopie Hertzienne, De
L'Ecole Normale Superieure, Paris France.
Figure 3: obtained from Dr. M. Kwok, Mr. L. Wang and Mr. R. H. Veunten, Aerospace Corporation, Los Angeles, California.
Figure 5: obtained from Dr. R. Heidner, Aerospace Corporation, Los Angeles, California.
Figure 6: obtained from H. E. Hunziker and H. R. Wendt, J. Chem. Phys. 64, 15 Apr 76.
Figure 7: obtained from Dr. G. Wong, Physics Department, Northwestern University, Evanston, Illinois.
Translucent Photonics
Figure
1 below shows the PL signal of the bulk Si wafer at 7°K. Clearly shown
is the transverse phonon assisted indirect band edge recombination peak
at 1.1 µm. The GE curve is using the ADC Ge detector and the InGa trace
is the InGaAs detector signal multiplied 1000 times.
Figure 1: PL photocurrent versus wavelength for bulk Si using InGaAs and Ge photodetectors.
Clearly, the ADC Ge detector has superior noise and responsivity when compared to the InGaAs detector.
System
optimization differences such as alignment can not account for a factor
of 1000 decrease in responsivity of the InGaAs detector. The noise
performance of the Ge detector is also very good.
Thus one must conclude that the Ge detector is well suited for PL applications.
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